FQB34N20LTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB34N20LTM
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 3.13 W 200 V Continuous Drain Current (ID):31 A 72 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 2 |
| Resistance | 75 mΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 1.31247 g |
| Number of Elements | 1 |
| Current Rating | 31 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 3.13 W |
| Power Dissipation | 3.13 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 3.9 nF |
| Continuous Drain Current (ID) | 31 A |
| Rds On Max | 75 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 45 ns |
| Turn-Off Delay Time | 170 ns |
| Element Configuration | Single |
| Rise Time | 520 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 75 mΩ |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2584
Distributors
pcbx
pcbxUnit Price$2.84699
Ext.Price$2.84699
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.84699 | $2.84699 |
| 10 | $1.88145 | $18.81450 |
| 25 | $1.67722 | $41.93050 |
| 50 | $1.49515 | $74.75750 |
| 100 | $1.33286 | $133.28600 |
| 300 | $1.18097 | $354.29100 |
| 500 | $1.04640 | $523.20000 |